公司能夠研發擁有自主知識產權的4英寸和6英寸VGF法單晶生長爐，建成了4英寸和6英寸VGF法“零位錯”太陽能電池用鍺單晶片生產線。
We invented 4’’ & 6’’ VGF monocrystal furnace with independent intellectual property right, and set up a production line of 4’’ & 6’’ zero EPD VGF germanium wafer producing line.
鍺晶片技術規格
|
生長方法 Growth Method |
VGF |
|
|
摻雜類型 Dopant |
P型：鎵 p-type: Ga |
N型：砷 n-type: As |
|
晶片形狀 Wafer Shape |
圓形（尺寸2、3、4、6英寸） Round (DIA: 2’’, 3’’, 4’’, 6") |
|
|
晶向 Surface Orientation * |
(100)±0.5° |
|
|
* Other Orientations maybe available upon request 其他晶向要求可根據客戶需求加工 |
||
|
電阻率 Resistivity (Ω.cm) |
根據客戶要求 As Required |
|
|
位錯 Etch Pitch Density (cm2) |
≤ 300 |
|
|
厚度 Thickness (μm) |
175±25（或根據客戶要求） 175±25 (or as required) |
|
|
TTV [P/P] (μm) |
≤ 10 |
|
|
WARP (μm) |
≤ 15 |
|
|
IF** (mm) |
32.5±1 |
|
|
**If needed by customer 根據客戶需要 |
||
|
主面拋光 Surface |
E/E, P/E, P/G |
|
